NEWSWIRETODAY Press Release& Newswire Distribution | HOME
MOST TRUSTED NEWSWIRE PRESS RELEASE DISTRIBUTION
PRTODAY / NewswireToday press release distribution service network
Written by / Agency / Source: Imec
Check Ads Availability|e-mail Article

Are you the owner of this article?, Turn it PREMIUM with your LOGO instead - and make it 3rd party Ads-Free! within the next hour!

Imec Pushes Single-Exposure Patterning Capability of 0.33NA EUVL to its Extreme Limits - Proven correlation between morphological and electrical data on 28nm pitch line/spaces increases understanding of stochastic defectivity impact on device reliability/yield - ASML.com / Inpria.com / imec-int.com
Imec Pushes Single-Exposure Patterning Capability of 0.33NA EUVL to its Extreme Limits

 

NewswireToday - /newswire/ - Leuven, Belgium, 2021/02/23 - Proven correlation between morphological and electrical data on 28nm pitch line/spaces increases understanding of stochastic defectivity impact on device reliability/yield - ASML.com / Inpria.com / imec-int.com.

   
 
Your Banner Ad Here instead - Showing along with ALL Articles covering Electronics / Instrumentation / RFID Announcements

Replace these Affiliate Programs at ANYTIME! Your banner here within the next hour. Learn How!


 

This week, at the 2021 SPIE Advanced Lithography Conference (spie.org), imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, and ASML (asml.com), the world’s leading manufacturer of semiconductor lithography equipment, present several papers that demonstrate the ultimate single-exposure patterning capability of today’s 0.33NA NXE:3400 extreme ultraviolet lithography (EUVL). Process optimizations have enabled the patterning of dense 28nm pitch line/spaces with an Inpria metal-oxide resist in one single exposure, relevant for high-volume manufacturing. For the first time, optical and e-beam inspections were correlated with electrical data to gain further insights in improving stochastic defectivity i.e., both breaks and bridges. In addition, source optimizations have led to printing the smallest pitch possible with the current NXE:3400 scanner (i.e., 24nm pitch line/spaces and 28nm pitch contact holes), allowing for early material development required for high-NA EUV lithography scanners.

Extreme ultraviolet lithography has reached a critical decision point where one can move to EUV multi-patterning for printing the densest features of the next generation ICs or push further the single print capability on today’s 0.33NA full field scanners. “While multi-patterning techniques would offer more relaxed pitches, single patterning enables a tremendous cost advantage and simpler process schemes”, says Kurt Ronse, advanced patterning program director at imec. “Imec and ASML have demonstrated 28nm pitch single-exposure patterning readiness for line/spaces, which corresponds to critical backof-line metal layers of a 5nm technology node. This brings the NXE:3400 scanner very close to its resolution limit for high-volume manufacturing.” The results were obtained using Inpria’s metal-oxide (MOx) resist process.

To increase learnings on stochastic patterning failures, defectivity inspection data obtained with scanning electron microscopy, broadband plasma and e-beam technologies were successfully correlated with data obtained from electrical measurements. The electrical tests were carried out on large-area ruthenium-metallized serpentine structures that allowed to measure electrical opens (and hence bridges in the resist), as well as on metallized fork-fork and tip-to-tip structures that allowed to measure electrical shorts (and hence critical breaks in the resist). Besides showing a good correlation, the complementary electrical measurements allow to capture important trends across multiple process changes that can help mitigating stochastic printing failures (papers n° 11609-26; 11611-21).

The extendibility of 0.33NA EUV lithography to pitch 28nm resulted from co-optimizing the various contributors to the patterning process, including mask templates, illumination settings, metal-oxide resist and etch processes. For example, the benefits of using bright field mask tonality and controlled lens aberrations were shown to largely improve the printability at small pitch and critical dimensions (papers n° 11609-27; 11609-29).

Besides pushing the boundaries of single-exposure EUVL for high-volume manufacturing, imec and ASML have brought the 0.33NA NXE:3400 to its extreme resolution with the aim to use it as a platform for early material development for the high-NA EUVL tools. Steven Scheer, VP advanced patterning process and materials at imec: “Imec and ASML recently also showed the tool’s capability of printing 24nm pitch line/spaces and 28nm pitch contact holes the latter by optimizing pupil and imaging conditions and by using double line/space exposures at a combined dose of 45mJ/cm2”. “Pattern transfer could be successfully demonstrated on very thin resists that are relevant for high-NA EUV”, says Andrew Grenville, CEO of Inpria. “This will provide the imec patterning ecosystem with the opportunity to develop resist, metrology and etch processes to accelerate the introduction of the next-generation EUVL system, i.e., the high-NA EXE:5000.” Scheer added,“These developments will complement the learnings that are currently being obtained from imec’s attosecond analytical and interference lithography lab (the AttoLab), expected to offer a high-NA resist imaging capability to print features down to pitches as small as 8nm.”

About imec

Imec (imec-int.com) is a world-leading research and innovation hub in nanoelectronics and digital technologies. The combination of our widely acclaimed leadership in microchip technology and profound software and ICT expertise is what makes us unique. By leveraging our world-class infrastructure and local and global ecosystem of partners across a multitude of industries, we create groundbreaking innovation in application domains such as healthcare, smart cities and mobility, logistics and manufacturing, energy and education.

As a trusted partner for companies, start-ups and universities we bring together more than 4,000 brilliant minds from almost 100 nationalities. Imec is headquartered in Leuven, Belgium and has distributed R&D groups at a number of Flemish universities, in the Netherlands, Taiwan, USA, and offices in China, India and Japan. In 2019, imec's revenue (P&L) totaled 640 million euro.

Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a “stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Government of Flanders), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre and OnePlanet, supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.), imec China (IMEC Microelectronics (Shanghai) Co. Ltd.), imec India (Imec India Private Limited) and imec Florida (IMEC USA nanoelectronics design center).

About Inpria

Inpria Corporation (inpria.com) is the world leader in metal oxide photoresist design, development and manufacturing. Inpria’s EUV photoresists enable semiconductor manufacturers to realize the full potential of EUV lithography.

 
 
Your Banner Ad Here instead - Showing along with ALL Articles covering Electronics / Instrumentation / RFID Announcements

Replace these Affiliate Programs at ANYTIME! Your banner here within the next hour. Learn How!


 

Written by / Agency / Source: Imec

 
 

Availability: All Regions (Including Int'l)

 

Traffic Booster: [/] Quick NewswireToday Visibility Checker

 

Distribution / Indexing: [+]  / [Company listed above is a registered member of our network. Content made possible by PRZOOM / PRTODAY indexing services]

 
 
# # #
 
 
  Your Banner Ad showing on ALL
Electronics / Instrumentation / RFID articles,
CATCH Visitors via Your Competitors Announcements!


Imec Pushes Single-Exposure Patterning Capability of 0.33NA EUVL to its Extreme Limits

Company website links NOT available to basic submissions
It is OK to republish and/or LINK any newswire for any legitimate media purpose as long as you name NewswireToday and LINK as the source.
 
Publisher Contact: Jade Liu - imec.be 
+32 16 28 16 93 jade.liu[.]imec.be
 
Newswire Today - PRZOOM / PRTODAY disclaims any content contained in this article. If you need/wish to contact the company who published the current release, you will need to contact them - NOT us. Issuers of articles are solely responsible for the accuracy of their content. Our complete disclaimer appears here.
IMPORTANT INFORMATION: Issuance, publication or distribution of this press release in certain jurisdictions could be subject to restrictions. The recipient of this press release is responsible for using this press release and the information herein in accordance with the applicable rules and regulations in the particular jurisdiction. This press release does not constitute an offer or an offering to acquire or subscribe for any Imec securities in any jurisdiction including any other companies listed or named in this release.

Electronics / Instrumentation / RFID via RSSAdd NewswireToday - PRZOOM Headline News to FeedBurner
Find who RetweetFollow @NewswireTODAY

Are you the owner of this article?, Turn it PREMIUM with your LOGO instead - and make it 3rd party Ads-Free! within the next hour!


Read Latest Articles From Imec / Company Profile


Read Electronics / Instrumentation / RFID Most Recent Related Newswires:

Siemens Streamlines, Secures Embedded RISC-V Development with Latest Nucleus ReadyStart Solution
Curtiss-Wright to Demo Modular Open Systems Approach SDR Technology for CMOSS and SOSA® Technical Standard 1.0 Aligned Systems At NI Connect 2022
Kontron Launches DARC™ VX208 SWaP-C Mission Platform
Kontron to Present A Wide Range of Innovative IoT Solutions At Embedded World 2022
Kontron Expands its System-on-module SL I.MX6 UL to Include the Leading Manufacturer-independent IEC-61131-3 Automation Software CODESYS®
Imec Unites Partners from the Semiconductor Value Chain to Jointly Target Net-zero Emissions for Chip Manufacturing
AMD and Qualcomm Collaborate to Optimize FastConnect Connectivity Solutions for AMD Ryzen Processors
Losant Earns Frost & Sullivan’s 2022 Global Technology Innovation Leadership Award for its Innovative and Customizable IoT Platform
Imec Spin-off SOLiTHOR Closes A €10M Seed Investment Round to Develop A New Disruptive Solid-state Battery Cell Technology
Curtiss-Wright Introduces Miniature Network Tactical Time-Space Position Information System for Highly Accurate Navigational, IMU, and GPS Data
Kontron's COMh-ccAS Delivers Higher Graphics and Computing Performance for IoT Applications
BASF Receives ISO-17025 Certification for Thermocouple Lab At Fremont, California Site
Curtiss-Wright Awarded Contract by Rheinmetall BAE Systems Land (RBSL) to Supply Aiming and Stabilization System
Landis+Gyr Applauded by Frost & Sullivan for Offering Customer Value Additions and Technology Innovation in the AMI Industry
Safran Develops its Inertial Micro-sensor Strategy

Boost Your Social Network
& Crowdfunding Campaigns


LIFETIME SOCIAL MEDIA WALL
NewswireToday Celebrates 10 Years in Business


PREMIUM Members


Visit  RightITnow, Inc.

Visit  BizJobs.com





 
  ©2022 NewswireToday — Limelon Advertising, Co.
Home | About | Advertise/Pricing | Contact | Investors | Privacy/TOS | Sitemap | FRANCAIS
newswire, PR press releases distribution service magazines engine news alert newsroom press room breaking news public relations articles company news alerts newswiredistribution ezine bizentrepreneur biznewstoday digital business report market search pr firms agencies reports distri-bution today investor relation successful internet entrepreneurs newswire distribution prtoday.com newswiredistribution asianewstoday bizwiretoday USA pr UK today - NOT affiliated with PRNewswire as we declined their partnership offer in 2013
 
PRTODAY & NewswireTODAY are proudly NOT affiliated with USA TODAY (usatoday.com)