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Imec Demonstrates Implant-free Quantum-well SiGe PFETs for Future High-performance CMOS Architectures - SEMICON WEST- Booth 1724, South Hall, Moscone Center, San Francisco, US - imec.be
Imec Demonstrates Implant-free Quantum-well SiGe PFETs for Future High-performance CMOS Architectures

 

NewswireToday - /newswire/ - Leuven, Belgium, 2011/07/12 - SEMICON WEST- Booth 1724, South Hall, Moscone Center, San Francisco, US - imec.be.

   
 
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Imec announces that it has successfully fabricated implant-free quantum-well (IF-QW) pFETs with an embedded silicon-germanium (SiGe) source/drain. These devices show an excellent short channel control and a record logic performance. A benchmark against various competing technologies showed competitive results. Finally, the device performance was also demonstrated at low operating voltages. These results prove that this device architecture is a viable option for the 16nm technology node and beyond.

Next-generation multimedia applications will require ICs that are at the same time very powerful and low power. One attractive option is to use high-mobility channels, for example using SiGe (silicon-germanium) with a high Ge content. However, further scaling of the gate length will require a better electrostatic gate control, and a low variability of the key electrical parameters. Imec and its partners have recently shown that the IF-QW concept with a buried SiGe channel meets these requirements while significantly improving the device performance.

Imec now presents the 2nd generation of SiGe45% IF-QW pFETs, processed on standard 300mm STI wafers. Compared to earlier IF-QW devices, the raised SiGe and Si substrate are recessed and replaced with a thick SiGe25% epi-layer to form the source/drain electrodes. Also, imec has developed process modules that minimize local variations and maximize the device performance.

This has resulted in an excellent short channel control, with a drain induced barrier lowering of ~110mV/V at 35nm-LG and a record 1mA/µm-Ion at -1V. For lower operating voltages, an increased performance was demonstrated. The devices were benchmarked at various operating voltages against state-of-the-art technologies such as SOI nFETs or SiGe-FET, showing at least equivalent results. These results show that SiGe IF-QW devices with embedded source drain form a promising architecture for integration on bulk Si, from the 16nm node onwards.

These results were obtained in cooperation with imec’s key partners in its core CMOS programs Globalfoundries, INTEL, Micron, Panasonic, Samsung, TSMC, Elpida, Hynix, Fujitsu and Sony.

About imec
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec (imec.be) delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China and Japan. Its staff of about 1,900 people includes more than 500 industrial residents and guest researchers. In 2010, imec's revenue (P&L) was 285 million euro.

Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.).

 
 
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Imec Demonstrates Implant-free Quantum-well SiGe PFETs for Future High-performance CMOS Architectures

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Imec |
Publisher Contact: Katrien Marent - imec.be 
+32 16 28 18 80 katrien.marent[.]imec.be
 
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