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EDs Grown on Ostendo’s Semi-polar GaN Achieve 2.5x the Brightness of C-plane GaN Based LEDs - Ostendo and TDI, part of the Oxford Instruments Group, are pleased to announce that LED structures grown on their semi-polar (11-22) GaN wafers have resulted in more than 2.5x the emission intensity of the c-plane GaN based LED structures
EDs Grown on Ostendo’s Semi-polar GaN Achieve 2.5x the Brightness of C-plane GaN Based LEDs

 

NewswireToday - /newswire/ - Carlsbad, CA, United States, 2010/12/16 - Ostendo and TDI, part of the Oxford Instruments Group, are pleased to announce that LED structures grown on their semi-polar (11-22) GaN wafers have resulted in more than 2.5x the emission intensity of the c-plane GaN based LED structures.

   
 
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Ostendo Technologies, Inc. (Ostendo) and Technologies and Devices International, Inc. (TDI), part of the Oxford Instruments Group, are pleased to announce that LED structures grown on their semi-polar (11-22) GaN wafers have resulted in more than 2.5x the emission intensity of the c-plane GaN based LED structures.

Ostendo & TDI had entered into an Information Exchange Agreement with Palo Alto Research Center (PARC) in 2008, pursuant to which they agreed to make semi-polar GaN wafers available for PARC to grow LED and Laser Diode structures on the supplied wafers, and independently validate and report the achieved results. As part of their validation, PARC has grown MQW LED structure on our semi-polar GaN side-by-side with a reference c-plane LED structure in the same MOCVD run. Some of the key results verify the following:

- The LED structure grown on our semi-polar GaN achieved more than 2.5x more emission intensity than the reference LED structure grown on c-plane GaN.
- Our semi-polar GaN allowed for higher indium (In) incorporation resulting in longer peak wavelength of ~25 nm for the structure grown.

Further findings of this collaboration has recently been published as a feature article titled “Semi-polar nitride surfaces and heterostructures” in the October 2010 issue of the prestigious Physica Status Solidi Magazine.

“This is an excellent validation of our work in the semi-polar GaN area for the last two and a half years as it verified the main advantage of our semi-polar GaN and should help encourage LED makers to start considering it for future LED brightness improvements” added Dr. Hussein S. El Ghoroury, CEO of Ostendo. “We are delighted that the production grade, semi-polar GaN wafers produced at TDI, which are as a result of research funded by Ostendo, has generated such encouraging results", comments Frazer Anderson, Business Development Director at Oxford Instruments, "As a business, Oxford Instruments aims to use innovation to turn smart science into world class products, and this joint initiative with Ostendo and PARC meets our customers' needs through the advanced technology our companies have available.”

Earlier this year Ostendo and TDI announced the availability of semi-polar (11-22) GaN layer on sapphire substrate wafers using Ostendo’s proprietary design and TDI’s proprietary Hydride Vapor Phase Epitaxy (HVPE) technology. This joint development now provides the opportunity to leading High Brightness Light Emitting Diode (HBLED) and Laser Diode developers to increase optical efficiency significantly compared with structures grown on c-plane GaN substrates.

About Ostendo Technologies

Ostendo Technologies, Inc. (ostendo.com) is a developer of Solid State Light (SSL) based display technologies and products for commercial and consumer markets with the objective to achieve efficiencies and cost effectiveness at the material, the device and the system levels. Ostendo’s enabling technologies support products that are disruptive in their individual marketplaces.

About Oxford Instruments- Technologies and Devices International, Inc. (TDI)
TDI, a wholly owned subsidiary of Oxford Instruments, is a world leader in the development of Hydride Vapor Phase Epitaxy (HVPE) processes and techniques for the production of novel compound semiconductors such as GaN, AlN, AlGaN, InN, InGaN. Using TDI HVPE technology, Oxford Instruments can produce templates for applications such as High Brightness Light Emitting Diodes (HBLEDs), Laser Diodes and High Electron Mobility Transistors (HEMT).

About Oxford Instruments plc

Oxford Instruments aims to pursue responsible development and deeper understanding of the world through science and technology. Oxford Instruments’ objective is to be a leading supplier of next generation tools and systems for research and industry. This involves the combination of core technologies in areas such as low temperature and high magnetic field environments, Nuclear Magnetic Resonance, X-ray electron and optical based metrology, and advanced growth, deposition and etching. Oxford Instruments’ products, expertise, and ideas address global issues such as energy, environment, terrorism and health and are part of the next generation of telecommunications, energy products, environmental measures, security devices, drug discovery and medical advances.

About PARC

A premier center for commercial innovation, PARC, a Xerox company, is in the business of breakthroughs. We work closely with global enterprises, entrepreneurs, government agencies and partners, and other clients to invent, co-develop, and bring to market game-changing innovations by combining imagination, investigation, and return on investment for our clients. For 40 years, we have lived at the leading edge of innovation, merging inquiry and strategy to pioneer technological change. PARC was incorporated in 2002 as a wholly owned independent subsidiary of Xerox Corporation – enabling us to continue pioneering technological change but across a broader set of industries and clients today.

 
 
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Written by / Agency / Source: Ostendo Technologies, Inc.

 
 

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EDs Grown on Ostendo’s Semi-polar GaN Achieve 2.5x the Brightness of C-plane GaN Based LEDs

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Publisher Contact: Erhan Ercan - Ostendo.com 
760-710-3000 sales[.]ostendo.com
 
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