Innovations in metal oxide semiconductor field effect transistor (MOSFET) and insulated gate bipolar transistor (IGBT) markets compensate for the lack of technological developments for mature products in the same space. These innovations contribute to the usage of discrete power semiconductors in new applications, and promote the exploration of new end user segment opportunities.
New analysis from Frost & Sullivan (semiconductors.frost.com), World Discrete Power Semiconductor Markets, reveals that the market earned revenues of $10.49 billion in 2005 and estimates this to reach $14.42 billion in 2009.
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“The growth of electronic content in automobiles and the tremendous rise of communication and electronic gadgets have a positive impact on the sales of discrete power semiconductors,” says Frost & Sullivan Senior Research Analyst Bonnie Varghese K. “The industry has witnessed a complete makeover and this will likely continue over the next few years.”
The increasing sales of consumer electronics, communication technology, and automobiles, especially in the Asia market, drive the discrete power semiconductor market All of these applications combined, contribute more than half of the discrete power revenues.
Despite the growth of the end-user markets, thyristors, rectifiers, and bipolar transistors lack technological innovation. Due to an absence of technological advancements, the products remain undifferentiated and as such, manufacturers have begun abandoning these products. Additionally, manufacturers lower prices to increase sales volumes and maintain revenues, which often results in negative growth or zero profits. Only a few industries invest in the R&D of rectifiers, and even this does not promise any enhanced applications in the near future.
“General-purpose rectifiers face a sharp decline, whereas ultra-fast and Schottky rectifiers will likely achieve growth,” explains Varghese. “Despite a move toward rectifier function integration with other power semiconductors, this trend appears speculative as some end users claim integration has a negative impact on the efficiency of discretes.”
Continuous improvements in the manufacturing process and greater efficiency have provided high-performance MOSFETs and IGBTs. Application and design engineers continuously improve the performance features of these devices by reducing drain-source resistance and offering low conduction losses, high power rating, faster switching speeds, low switching losses, and smaller packaging sizes. Better performance results in greater application range and decreasing prices. Low prices and additional features have assisted MOSFETs and IGBTs to increase and maintain their market share.
World Discrete Power Semiconductor Markets is part of the Semiconductors Growth Partnership Service program, which includes research in the following markets: World Markets for Microcontrollers in Automotives, World Markets for Discretes Power Semiconductors in Automobiles, World Markets for ASICs in Automobiles, World Handset RF Semiconductor Market, and World Wafer Markets. Interviews are available to the press.
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