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IQE Joins imec’s Gallium Nitride-on-Silicon Industrial Affiliation Program - IQE and imec demonstrate 650 V GaN-on-Si power diodes on 200 mm wafers - /
IQE Joins imec’s Gallium Nitride-on-Silicon Industrial Affiliation Program


NewswireToday - /newswire/ - Leuven, Belgium, 2016/05/16 - IQE and imec demonstrate 650 V GaN-on-Si power diodes on 200 mm wafers - /

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Imec, the world-leading nanoelectronics research center, today announced a strategic partnership on GaN-on-Si (Gallium Nitride-on-Silicon) technology with IQE, the global leader in designing and manufacturing advanced semiconductor wafer products and services.

GaN technology offers faster switching-power devices with higher breakdown voltage and lower on-resistance than silicon, making it an ideal material for advanced power electronic components. The partnership builds on promising results achieved in a recent project, in which imec and IQE collaborated to fabricate GaN power diodes using imec’s proprietary diode architecture and IQE’s high voltage epiwafers.

IQE enters imec’s GaN-on-Si Industrial Affiliation Program that offers joint research and development on GaN-on-Si 200mm epitaxy and enhancement mode device technology to a variety of companies including IDMs, equipment and material suppliers, fabless design houses and packaging companies. The program includes research on novel substrates to improve the quality of epitaxial layers, new isolation modules to enhance integration levels, and advanced vertical device development. As a GaN-on-Si Program partner, IQE gains access to next-generation epitaxy, devices and power electronics processes, including imec’s complete 200mm CMOS-compatible GaN process line.

Wayne Johnson, Head of IQE’s Power Business Unit, said:

“We are delighted to have the opportunity to extend our relationship with imec through the Industrial Affiliation Program.

“The importance of GaN on Si for power devices cannot be understated, particularly as we enter an era of electrically propelled transportation and increasing demands for energy efficient power control systems that require high voltage and high power capabilities.

“IQE’s proven track record in developing and manufacturing GaN based epiwafers, coupled with imec’s unquestionable reputation for world-leading research in nanoelectronics makes for a powerful collaboration in this rapidly growing technology space.”

In its earlier collaborative project, imec worked with IQE to create state-of-the-art GaN power diodes. Imec has applied its proprietary Gated Edge Terminated (GET) Schottky diode device architecture to IQE’s high voltage GaN buffers on 200mm Si substrates. The main challenge on power diodes is to obtain devices that simultaneously show low leakage current and low turn on voltage. Thanks to the GET diode device architecture and to the low buffer leakage current of IQE wafers, the large GaN power diodes (10mm), that were fabricated in imec’s 200mm Si pilot line, showed a low leakage current (up to 650V) and low turn-on voltage. The power Schottky diodes reaches forward and reverse specifications across the full temperature range, spanning from 25˚C till 150˚C with a tight distribution.

“We are excited about this strategic partnership with IQE. Our joint results show that the IQE epiwafers are of excellent quality and are well-aligned to meet the specifications for power Schottky diodes. We look forward to collaborating with IQE to advance our promising results, which demonstrate that our proprietary GET Schottky diode device architecture and process technology can be transferred to external wafers like those provided by IQE,” stated Rudi Cartuyvels, executive vice president smart systems and energy technology at imec. “Our 200mm GaN-on-Si process is available to our program partners and is engineered to fit partner specific product needs.”

About imec
Imec ( performs world-leading research in nanoelectronics and photovoltaics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, USA, China, India and Japan. Its staff of about 2,500 people includes about 740 industrial residents and guest researchers. In 2015, imec's revenue (P&L) totaled 415 million euro.

Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shanghai) Co. Ltd.) and imec India (Imec India Private Limited).

About IQE
IQE ( is the leading global supplier of advanced semiconductor wafers with products that cover a diverse range of applications, supported by an innovative outsourced foundry services portfolio that allows the Group to provide a 'one stop shop' for the wafer needs of the world's leading semiconductor manufacturers. our products are found in many leading-edge consumer, communication, computing and industrial applications, including a complete range of wafer products for the wireless industry, such as smartphones and wireless infrastructure, Wi-Fi, base stations, GPS, and satellite communications; optical communications, optical storage, printing, thermal imagers, leading-edge medical products, barcode, ultra high brightness LEDs, a variety of advanced silicon based systems and high efficiency concentrator photovoltaic (CPV) solar cells. IQE operates multiple manufacturing and R&D facilities worldwide.

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IQE Joins imec’s Gallium Nitride-on-Silicon Industrial Affiliation Program

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GaN-on-Si Technology | IQE PLC
Publisher Contact: Hanne Degans - 
+32 16 28 17 69 / +32 486 06 51 75 (mobile) hanne.degans[.]
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