Infineon Technologies AG and Panasonic Corporation have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated intoInfineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure. This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far. Both parties have agreed not to disclose any further details of the contract. For the first time the companies will showcase samples of a 600V 70mΩ device in a DSO (Dual Small Outline) package at the trade show Applied Power Electronics Conference and Exposition(APEC), which will be held in Charlotte, North Carolina, March 15-19, 2015.
GaN on silicon has been receiving significant attention as one of the next compound semiconductor technologies that will on the one hand enable high power density and therefore a smaller footprint (e.g., for power supplies and adapters), and on the other hand serve as a major key for energy efficiency improvement. In general, power devices based on GaN on silicon technology can be used in a wide range of fields, from high voltage industrial applications such as power supplies in server farms (a potential application of the showcased 600V GaN device) to low voltage applications such as DC-DC conversion (e.g., in high-end consumer goods). According to an IHS market research report the GaN on silicon related market for power semiconductors is expected to grow with a compound annual growth rate (CAGR) of more than 50%, leading to an expansion of volume from US$15 million in 2014 to US$800 million by 2023.
“Infineon is committed to serve its customers with a broad best-in-class product and technology portfolio including reliable power devices based on Gallium nitride. We are convinced that enhancement mode GaN on silicon switches, together with our corresponding driver and optimized driving scheme, will provide high value to our customers, while the dual sourcing concept will help them manage and stabilize their supply chains,” stated Andreas Urschitz, President of the Power Management & Multimarket Division of Infineon Technologies AG.
“Panasonic developed its normally-off GaN power technology which has a simple configuration and easy-to control dynamics, by making full use of its compound semiconductor experience.We expect to accelerate the expansion of GaN power devices by licensing our normally-off GaN transistor structure out of our GaN power technology to Infineon. We will continuously contribute to solutions for consumer requests by innovating our normally-off GaN technology”, said Toru Nishida, president of Panasonic Semiconductor Solutions Co. Ltd.
Panasonic Corporation (panasonic.net) is a worldwide leader in the development and engineering of electronic technologies and solutions for customers in residential, non-residential, mobility and personal applications. Since its founding in 1918, the company has expanded globally and now operates around 500 consolidated companies worldwide, recording consolidated net sales of 7.74 trillion yen for the year ended March 31, 2014. Committed to pursuing new value through innovation across divisional lines, the company strives to create a better life and a better world for its customers.
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Infineon Technologies AG (infineon.com) is a world leader in semiconductors. Infineon offers products and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2014 fiscal year (ending September 30), the company reported sales of Euro 4.3 billion with about 29,800 employees worldwide. In January 2015, Infineon acquired US-based International Rectifier Corporation, a leading provider of power management technology, with revenues of USD 1.1 billion (fiscal year 2014 ending June 29) and approximately 4,200 employees.
Information Number: INFPMM201503-041